Studies on structural, electrical, and optical properties of Cu doped As–Se–Te chalcogenide glasses

Cu doped chalcogenide ChG glassy films in the As–Se–Te glass system have been prepared using thermal evaporation techniques. Single-source evaporation from bulk 1−x As0.40Se0.35Te0.25+x Cu glasses with x=0.05, 0.075, 0.10, 0.125, and 0.15, as well as dual-source coevaporation from As-chalcogenide and Cu-chalcogenide binary glasses as source materials, has been explored. We have shown that it is not possible to deposit high concentration Cu doped ChG glassy films, from the Cu doped bulk samples using single-source evaporation. However, using the dual-source coevaporation technique, we have demonstrated that the films can be doped with high concentrations of Cu. Micro-Raman spectroscopy has been utilized to verify that Cu is introduced into the glass network without disrupting the basic As-chalcogen units. Optical measurements have shown that introduction of Cu decreases the band gap of As–Se–Te glasses. The electrical properties of the investigated films have been measured at different temperatures and it has been shown that Cu incorporation in the As–Se–Te glass system vastly improves electrical conductivity. Moreover, we have shown that the temperature dependence of electrical conductivity can be fitted assuming variable range hopping between states near the Fermi level. © 2007 American Institute of Physics. DOI: 10.1063/1.2712162